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| NTE2325 Silicon NPN Transistor High Voltage Switch Features: D High Reverse Voltage: VCBO = 900V (Max) D High Speed Switching: tf = 0.7s (Max) Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Peak Collector Current (Note 1), icp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A Collector Power Dissipation (TC = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 10% Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Sustaining Voltage V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCEO(sus) IC = 1mA, IE = 0 IC = 5mA, RBE = IE = 1mA, IC = 0 VCB = 800V, IE = 0 VEB = 5V, IC = 0 IC = 3A, L = 500H, IB = 1A 900 800 7 - - 800 800 900 - - - - - - - - - - - 10 10 - - - V V V A A V V V Symbol Test Conditions Min Typ Max Unit VCEX(sus)1 IC = 1A, IB1 = 200mA, IB2 = -200mA, L = 2mH, Clamped VCEX(sus)2 IC = 500mA, IB1 = 100mA, IB2 = -100mA, L = 5mH, Clamped Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter ON Characteristics DC Current Gain hFE1 hFE2 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Dynamic Characteristics Current Gain-Bandwidth Product Output Capactiance Switching Characteristics Turn-On Time Storage Time Fall Time ton tstg tf IC = 2A, IB1 = 400mA, IB2 = 800mA, RL = 200, VCC = 400V - - - 1.0 3.0 0.7 - - - s s s fT Cob VCE = 10V, IC = 200mA VCB = 10V, f = 1MHz - - 15 60 - - MHz pF VCE(sat) VBE(sat) VCE = 5V, IC = 200mA VCE = 5V, IC = 1A IC = 1.5A, IB = 300mA IC = 1.5A, IB = 300mA 10 8 - - - - - - - - 2.0 1.5 V V Symbol Test Conditions Min Typ Max Unit .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base .100 (2.54) Emitter Collector/Tab |
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